View HYM72V32M656BLT6-P_5967078.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

32mx64bits pc100 sdram so dimm based on 16mx16 sdram with lv ttl, 4 banks & 8k refresh this document is a general product descripti on and is subject to change without notice. hynix semiconductor inc. does not assum e any responsibility for use of circuits described. no patent licenses are implied. rev. 0.4/mar. 02 1 hym72v32m656b(l)t6 series description the hym72v32m656b(l)t6 series are 32mx64bits synchronous dram modules. the modules are composed of eight 16mx16bits cmos synchronous drams in 400mil 54pin tsop-ii package, one 2kbit eeprom in 8pin tssop package on a 144pin glass-epoxy printed circuit board. one 0.22uf and one 0.0022uf decoupling capacitors per each sdram are mounted on the pcb. the hym72v32m656b(l)t6 series are dual in-line memory modul es suitable for easy interchange and addition of 256mbytes mem- ory. the hym72v32m656b(l)t6 series are fully synchronous operatio n referenced to the positive edge of the clock . all inputs a nd outputs are synchronized with the rising edge of the clock input. the data paths are internally pipelined to achieve very high bandwidth. features ? pc100mhz support ? 144pin sdram so dimm ? serial presence detect with eeprom ? 1.25? (31.75mm) height pcb with single sided com- ponents ? single 3.3 0.3v power supply ? all device pins are compatible with lvttl interface ? data mask function by dqm ? sdram internal banks : four banks ? module bank : two physical bank ? auto refresh and self refresh ? 8192 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks ordering information part no. clock frequency internal bank ref. power sdram package plating hym72v32m656bt6-p 100mhz 4 banks 8k normal tsop-ii gold hym72v32m656bt6-s 100mhz HYM72V32M656BLT6-P 100mhz low power hym72v32m656blt6-s 100mhz
pc100 sdram so dimm rev. 0.4/mar. 02 2 hym72v32m656b(l)t6 series pin description pin pin name description ck0, ck1 clock inputs the system clock input. all other inputs are registered to the sdram on the rising edge of clk cke0, cke1 clock enable controls internal clock signal and wh en deactivated, the sdram will be one of the states among power down, suspend or self refresh /s0, /s1 chip select enables or disabl es all inputs except ck, cke and dqm ba0, ba1 sdram bank address selects bank to be activated during /ras activity selects bank to be read/written during /cas activity a0 ~ a12 address row address : ra0 ~ ra12, column address : ca0 ~ ca8 auto-precharge flag : a10 /ras, /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function truth table for details dqm0~dqm7 data input/output mask controls output buffers in read mode and masks input data in write mode dq0 ~ dq63 data input/output multiplexed data input / output pin vcc power supply (3.3v) power supply for internal circuits and input buffers v ss ground ground scl spd clock input serial presence detect clock input sda spd data input/output serial presence detect data input/output sa0~2 spd address input serial presence detect address input nc no connection no connection
pc100 sdram so dimm rev. 0.4/mar. 02 3 hym72v32m656b(l)t6 series pin assignments front side back side front side back side pin no. name pin no. name pin no. name pin no. name 1 vss 2 vss 71 s1 72 nc 3 dq0 4 dq32 73 nc 74 ck1 5 dq1 6 dq33 75 vss 76 vss 7 dq2 8 dq34 77 nc 78 nc 9 dq3 10 dq35 79 nc 80 nc 11 vcc 12 vcc 81 vcc 82 vcc 13 dq4 14 dq36 83 dq16 84 dq48 15 dq5 16 dq37 85 dq17 86 dq49 17 dq6 18 dq38 87 dq18 88 dq50 19 dq7 20 dq39 89 dq19 90 dq51 21 vss 22 vss 91 vss 92 vss 23 dqm0 24 dqm4 93 dq20 94 dq52 25 dqm1 26 dqm5 95 dq21 96 dq53 27 vcc 28 vcc 97 dq22 98 dq54 29 a0 30 a3 99 dq23 100 dq55 31 a1 32 a4 101 vcc 102 vcc 33 a2 34 a5 103 a6 104 a7 vss 36 vss 105 a8 106 ba0 35 37 dq8 38 dq40 107 vss 108 vss 39 dq9 40 dq41 109 a9 110 ba1 41 dq10 42 dq42 111 a10/ap 112 a11 43 dq11 44 dq43 113 vcc 114 vcc 45 vcc 46 vcc 115 dqm2 116 dqm6 47 dq12 48 dq44 117 dqm3 118 dqm7 49 dq13 50 dq45 119 vss 120 vss 51 dq14 52 dq46 121 dq24 122 dq56 53 dq15 54 dq47 123 dq25 124 dq57 55 vss 56 vss 125 dq26 126 dq58 57 nc 58 nc 127 dq27 128 dq59 59 nc 60 nc 129 vcc 130 vcc voltage key 131 dq28 132 dq60 133 dq29 134 dq61 61 ck0 62 cke0 135 dq30 136 dq62 63 vcc 64 vcc 137 dq31 138 dq63 65 /ras 66 /cas 139 vss 140 vss 67 /we 68 cke1 141 sda 142 scl 69 /s0 70 a12 143 vcc 144 vcc
pc100 sdram so dimm rev. 0.4/mar. 02 4 hym72v32m656b(l)t6 series block diagram
pc100 sdram so dimm rev. 0.4/mar. 02 5 hym72v32m656b(l)t6 series serial presence detect byte number function description function value note -p -s -p -s byte0 # of bytes written into serial memory at module manufacturer 128 bytes 80h byte1 total # of bytes of spd memory device 256 bytes 08h byte2 fundamental memory type sdram 04h byte3 # of row addresses on this assembly 13 0dh 1 byte4 # of column addresses on this assembly 9 09h byte5 # of module banks on this assembly 2 bank 02h byte6 data width of this assembly 64 bits 40h byte7 data width of this assembly (continued) - 00h byte8 voltage interface standard of this assembly lvttl 01h byte9 sdram cycle time @/cas latency=3 10ns 10ns a0h a0h byte10 access time from cl ock @/cas latency=3 6ns 6ns 60h 60h byte11 dimm configuration type none 00h byte12 refresh rate/type 7.8125us / self refresh supported 82h byte13 primary sdram width x16 10h byte14 error checking sdram width none 00h byte15 minimum clock delay back to back random column address tccd = 1 clk 01h byte16 burst lenth supporte d 1,2,4,8,full page 8fh 2 byte17 # of banks on each sdram device 4 banks 04h byte18 sdram device attributes, /cas la taency /cas latency=2,3 / cas latency=3 06h 04h byte19 sdram device attributes , /cs lataency /cs latency=0 01h byte20 sdram device attribut es, /we lataency /we latency=0 01h byte21 sdram module attributes neither buffered nor registered 00h byte22 sdram device attributes, general +/- 10% voltage tolerence, burst read single bit write, precharge all, au to precharge, early ras precharge 0eh byte23 sdram cycle time @/cas latency=2 10ns 12ns a0h c0h byte24 access time from cl ock @/cas latency=2 6ns 6ns 60h 60h byte25 sdram cycle time @/cas latency=1 - - 00h 00h byte26 access time from cl ock @/cas latency=1 - - 00h 00h byte27 minimum row precharge time (trp) 20ns 20ns 14h 14h byte28 minimum row active to row active delay (trrd) 20ns 20ns 14h 14h byte29 minimum /ras to /cas delay (trcd) 20ns 20ns 14h 14h byte30 minimum /ras puls e width (tras) 50ns 50ns 32h 32h byte31 module bank density 128mb 20h byte32 command and address signal input setup time 2ns 2ns 20h 20h byte33 command and address signal input hold time 1ns 1ns 10h 10h byte34 data signal input setup time 2ns 2ns 20h 20h byte35 data signal input hold time 1ns 1ns 10h 10h byte36 ~61 superset information (may be used in future) tbd 00h byte62 spd revision intel spd 1.2b 12h 3, 8 byte63 checksum for byte 0~62 - 21h 3fh byte64 manufacturer jedec id code hynix jeded id adh byte65 ~71 ....manufacturer jedec id code unused ffh byte72 manufacturing location hynix (korea area) hsa (united states area) hsu (europe area) hsj (japan area) hss(singapore) asia area 0*h 1*h 2*h 3*h 4*h 5*h 10
pc100 sdram so dimm rev. 0.4/mar. 02 6 hym72v32m656b(l)t6 series byte number function description function value note -8 -s -8 -s byte73 manufacturer?s part number (component) 7 (sdram) 37h 4, 5 byte74 manufacturer?s part number (128mb based) 2 32h 4, 5 byte75 manufacturer?s part number (voltage interface) v (3.3v, lvttl) 56h 4, 5 byte76 manufacturer?s part number (memory width) 3 33h 4, 5 byte77 manufacturer?s part number (memory width) 2 32h 4, 5 byte78 manufacturer?s part number (module type) m(sodimm) 4dh 4, 5 byte79 manufacturer?s part number (data width) 6 36h 4, 5 byte80 ....manufacturer?s part number (data width) 5 35h 4, 5 byte81 manufacturer?s part number (refresh, sdram bank) 6 (8k refresh, 4banks) 36h 4, 5 byte82 manufacturer?s part number(manufacturing site) b 42h 4, 5 byte83 manufacturer?s part number (package type) t 54h 4, 5 byte84 manufacturer?s part number (component configuration) 6 (x16 based) 36h 4, 5 byte85 manufacturer?s part number (hyphent) - (hyphen) 2dh 4, 5 byte86 manufacturer?s part number (min. cycle time) p s 50h 53h 4, 5 byte87 ~90 manufacturer?s part number blanks 20h 4, 5 byte91 revision code (for component) process code - 4, 6 byte92 ....revision code (for pcb) process code - 4, 6 byte93 manufacturing date year - 3, 6 byte94 ....manufacturing date work week - 3, 6 byte95 ~98 assembly serial number serial number - 6 byte99 ~125 manufacturer specific data (may be used in future) none 00h byte126 system frequency support 100mhz 64h 7, 8 byte127 intel specification details for 100mhz support refer to note7 cfh cdh 7, 8 byte128 ~256 unused storage locations - 00h continued byte 82~87 for l-part byte number function description function value note -p -s -p -s byte82 manufacturer?s part number(manufacturing site) b 42h 4, 5 byte83 manufacturer?s part number (power) l4ch4, 5 byte84 manufacturer?s part number (package type) t 54h 4, 5 byte85 manufacturer?s part number (component configuration) 6 (x16 based) 36h 4, 5 byte86 manufacturer?s part number (hyphent) - (hyphen) 2dh 4, 5 byte87 manufacturer?s part number (min. cycle time) p s 50h 53h 4, 5 note : 1. the bank address is excluded 2. 1, 2, 4, 8 for interleave burst type 3. bcd adopted 4. ascii adopted 5. basically hynix writes part no. except for ?hym? in by te 73~90 to use the limited 18 bytes from byte 73 to byte 90 6. not fixed but dependent 7. ck0, ck1 connected to di mm, tbd junction temp, cl2(3) support, inte l defined concurrent auto precharge support 8. refer to intel sp d specification 1.2b 9. refer to hynix web site.
pc100 sdram so dimm rev. 0.4/mar. 02 7 hym72v32m656b(l)t6 series absolute maximum ratings note : operation at above absolute maximum rati ng can adversely affect device reliability. dc operating condition (t a =0 to 70 c ) note : 1.all voltages are referenced to v ss = 0v 2.v ih (max) is acceptable 5.6v ac pul se width with <=3ns of duration. 3.v il (min) is acceptable -2.0v ac pulse width with <=3ns of duration. ac operating test condition (t a =0 to 70 c , v dd =3.3 0.3v, v ss =0v) note : 1.output load to measure access times is equivalent to two ttl gates and one capacito r (50pf). for details, refer to ac/dc outp ut load circuit parameter symbol rating unit ambient temperature t a 0 ~ 70 c storage temperature t stg -55 ~ 125 c voltage on any pin relative to v ss v in , v out -1.0 ~ 4.6 v voltage on v dd relative to v ss v dd, v ddq -1.0 ~ 4.6 v short circuit output current i os 50 ma power dissipation p d 1w soldering temperature ? time t solder 260 ? 10 c ? sec parameter symbol min typ max unit note power supply voltage v dd , v ddq 3.0 3.3 3.6 v 1 input high voltage v ih 2.0 3.0 v ddq + 0.3 v 1,2 input low voltage v il -0.3 0 0.8 v 1,3 parameter symbol value unit note ac input high / low level voltage v ih / v il 2.4/0.4 v input timing measurement reference level voltage vtrip 1.4 v input rise / fall time tr / tf 1 ns output timing measurement reference level voltage voutref 1.4 v output load capacitance for access time measurement c l 50 pf 1
pc100 sdram so dimm rev. 0.4/mar. 02 8 hym72v32m656b(l)t6 series capacitance (ta=25 c , f=1mhz) output load circuit parameter pin symbol -p/s unit min max input capacitance ck0, ck2 c i1 25 40 pf cke0 c i2 20 30 pf /s0, /s2 c i3 20 30 pf a0~11, ba0, ba1 c i4 40 50 pf /ras, /cas, /we c i5 38 45 pf dqm0~dqm7 ci 6 815pf data input / output capacitance dq0 ~ dq63 c i/o 10 15 pf vtt=1.4v rt=250 ? 50pf output 50pf output dc output load circuit ac output load circuit
pc100 sdram so dimm rev. 0.4/mar. 02 9 hym72v32m656b(l)t6 series dc characteristics i (ta=0 to 70 c , v dd =3.3 0.3v) note : 1.v in = 0 to 3.6v, all other pins are not tested under v in =0v 2.d out is disabled, v out =0 to 3.6 dc characteristics ii note : 1. i dd1 and i dd4 depend on output loading and cycle rates. specifi ed values are measured with the output open 2. min. of trrc (refresh ras cycle time) is shown at ac characteristics ii 3.hym72v32m656bt6-p/s 4. HYM72V32M656BLT6-P/s parameter symbol min. max unit note input leakage current i li -8 8 ua 1 output leakage current i lo -1 1 ua 2 output high voltage v oh 2.4 - v i oh = -4ma output low voltage v ol -0.4vi ol = +4ma parameter symbol test condition speed unit note -p -s operating current i dd1 burst length=1, one bank active t rc t rc (min), i ol =0ma 700 ma 1 precharge standby current in power down mode i dd2p cke v il (max), t ck = min 16 ma i dd2ps cke v il (max), t ck = 16 precharge standby current in non power down mode i dd2n cke v ih (min), cs v ih (min), t ck = min input signals are changed one time during 2clks. all other pins v dd -0.2v or 0.2v 120 ma i dd2ns cke v ih (min), t ck = input signals are stable. 110 active standby current in power down mode i dd3p cke v il (max), t ck = min 50 ma i dd3ps cke v il (max), t ck = 50 active standby current in non power down mode i dd3n cke v ih (min), cs v ih (min), t ck = min input signals are changed one time during 2clks. all other pins v dd -0.2v or 0.2v 280 ma i dd3ns cke v ih (min), t ck = input signals are stable. 240 burst mode operating current i dd4 t ck t ck (min), i ol =0ma all banks active cl=3 695 ma 1 cl=2 690 auto refresh current i dd5 t rrc t rrc (min), all banks active 980 ma 2 self refresh current i dd6 cke 0.2v 30 ma 3 12 ma 4
pc100 sdram so dimm rev. 0.4/mar. 02 10 hym72v32m656b(l)t6 series ac characteristics i (ac operating conditions unless otherwise noted) note : 1.assume tr / tf (input rise and fall time ) is 1ns if tr & tf > 1ns, then [(tr+tf)/2-1]ns should be added to the parameter 2.access times to be measured with input si gnals of 1v/ns edge rate, from 0.8v to 2.0v if tr > 1ns, then (tr/2-0.5)ns should be added to the parameter parameter symbol -p -s unit note min max min max system clock cycle time cas latency = 3 tck3 10 1000 10 1000 ns 1 cas latency = 2 tck2 10 12 clock high pulse width tchw 3 - 3 - ns 2 clock low pulse width tclw 3 - 3 - ns 2 access time from clock cas latency = 3 tac3 - 6 - 6 ns 3 cas latency = 2 tac2 - 6 - 6 ns data-out hold time toh 3 - 3 - ns data-input setup time tds 2 - 2 - ns 2 data-input hold time tdh 1 - 1 - ns 2 address setup time tas 2 - 2 - ns 2 address hold time tah 1 - 1 - ns 2 cke setup time tcks 2 - 2 - ns 2 cke hold time tckh 1 - 1 - ns 2 command setup time tcs 2 - 2 - ns 2 command hold time tch 1 - 1 - ns 2 clk to data output in low-z time tolz 1 - 1 - ns clk to data output in high-z time cas latency = 3 tohz3 3 6 3 6 ns cas latency = 2 tohz2 3 6 3 6 ns
pc100 sdram so dimm rev. 0.4/mar. 02 11 hym72v32m656b(l)t6 series ac characteristics ii note : 1. a new command can be given trrc after self refresh exit parameter symbol -p -s unit note min max min max ras cycle time operation trc 70 - 70 - ns auto refresh trrc 70 - 70 - ns ras to cas delay trcd 20 - 20 - ns ras active time tras 50 100k 50 100k ns ras precharge time trp 20 - 20 - ns ras to ras bank active delay trrd 20 - 20 - ns cas to cas delay tccd 1 - 1 - clk write command to data-in delay twtl 0 - 0 - clk data-in to precharge command tdpl 2 - 2 - clk data-in to active command tdal 5 - 5 - clk dqm to data-out hi-z tdqz 2 - 2 - clk dqm to data-in mask tdqm 0 - 0 - clk mrs to new command tmrd 2 - 2 - clk precharge to data output hi-z cas latency = 3 tproz3 3 - 3 - clk cas latency = 2 tproz2 2 - 2 - clk power down exit time tpde 1 - 1 - clk self refresh exit time tsre 1 - 1 - clk 1 refresh time tref - 64 - 64 ms
pc100 sdram so dimm rev. 0.4/mar. 02 12 hym72v32m656b(l)t6 series device operatin g option table hym72v32m656b(l)t6-p hym72v32m656b(l)t6-s cas latency trcd tras trc trp tac toh 100mhz(10ns) 2clks 2clks 5clks 7clks 2clks 6ns 3ns 83mhz(12ns) 2clks 2clks 5clks 7clks 2clks 6ns 3ns 66mhz(15ns) 2clks 2clks 4clks 6clks 2clks 6ns 3ns cas latency trcd tras trc trp tac toh 100mhz(10ns) 3clks 2clks 5clks 7clks 2clks 6ns 3ns 83mhz(12ns) 2clks 2clks 5clks 7clks 2clks 6ns 3ns 66mhz(15ns) 2clks 2clks 4clks 6clks 2clks 6ns 3ns
pc100 sdram so dimm rev. 0.4/mar. 02 13 hym72v32m656b(l)t6 series command truth table note : 1. exiting self refresh occurs by asyn chronously bringing cke from low to high 2. x = don t care, h = logic high, l = logic low. ba =bank addr ess, ra = row address, ca = column address, opcode = operand code, nop = no operation command cken-1 cken cs ras cas we dqm addr a10/ ap ba note mode register set h x l l l l x op code no operation h x hxxx xx lhhh bank active h x l l h h x ra v read hxlhlhxca l v read with autoprecharge h write hxlhllxca l v write with autoprecharge h precharge all banks hxllhlxx hx precharge selected bank lv burst stop h x l h h l x x dqm h x v x auto refresh h h l l l h x x burst-read-single- write h x lllhx a9 pin high (other pins op code) self refresh 1 entry h l lllhx x exit l h hxxx x lhhh precharge power down entry h l hxxx x x lhhh exit l h hxxx x lhhh clock suspend entry h l hxxx x x lvvv exit l h x x
pc100 sdram so dimm rev. 0.4/mar. 02 14 hym72v32m656b(l)t6 series package demension

▲Up To Search▲

Price & Availability of HYM72V32M656BLT6-P

	To Download HYM72V32M656BLT6-P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .